How is Technology Influencing the Growth of Power Devices?

How is Technology Influencing the Growth of Power Devices?

By Manufacturing Technology Insights | Monday, May 25, 2020

 Influencing the Growth of Power DevicesThe two leading technologies influencing the growth are GaN (Gallium Nitride) and SiC (Silicon Carbide) due to their superior material properties.

FREMONT, CA: According to industry research, electronics manufacturing is growing at a stable rate due to power electronics. Power devices, today, is present in many high-value products across different market segments including IT, electric motor drives, grid infrastructure, aerospace, and automotive. While electric aerospace and automotive are developing, the other three are mature markets.

The Market for Power Devices Continues to Develop

For the power-generation industry, the developments in power devices are continuing to drive competent and steadfast power-grid infrastructure. At present, about 40 percent of generated electric power passes through power electronics between production and end-use.

As the power consumption of data-center tools increases with reference to the total electrical power consumption, the data-center architectures will depend on high competence designs. Innovations in power electronics power more electric aerospace applications like no hydraulic systems with more or full-electric engines. Power devices are used in electric drive, energy storage, interior, power conversion, thermal, powertrain, and chassis in electric vehicles. Electric-vehicle adoption offers a high-volume chance for power electronics. It is expected to grow to a three billion dollar market by 2022.

The two leading technologies influencing the growth are GaN (Gallium Nitride) and SiC (Silicon Carbide) due to their superior material properties. SiC is generally used in high power applications (10 kV and beyond) and have the advantage of lower cost and switching losses, but with less reliability. While GaN, on the other hand, is typically employed in high-speed applications having higher switching frequencies. Other benefits include high breakdown voltage and operating temperatures, along with being more robust, reliable, and radiation hardened. However, it has a shortcoming of material mismatch (GaN on SiC or Si) and higher cost. Additionally, as promising applications start to drive growth and classify the demands, opportunities will present itself for developments in manufacturing and device design to facilitate higher volume with better reliability, quality, and reduced cost.

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